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GH006- BULK电容的设计计算

Bulk电容一般指整流后直流母线上的大容量电解电容（市电AC→整流桥→Bulk电容→后级变换器），也...

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GH005-损耗设计

开关电源损耗构成（反激/正激/LLC等通用，按原边、副边、辅助、其他分类，附成因与降损要点）整体分为...

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GH004-GaN参数详解及应用

VDSS、VGSS、VGS(th)、ID、IDM、、RΘJC、RΘJA、IGSS、IDSS、RDS(...

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GH100Y016Y3EL

GaN-on-Siliconenhancementmodehigh-electron-mobilit...

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GH100V032Y3EB

Description：Bi-directionalGaN-on-Siliconenhancemen...

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GH070E240A1DB

Description：Thisisa700VGaN-on-Sienhancement-modepo...

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GH070E135A1DC

Description：Thisisa700VGaN-on-Sienhancement-modepo...

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GH065G190G1DC

Description：TheGH065G190G1DCisanenhancementmodeGaN...

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GH065C041T1TF

TheGH065C041T1TF650V,41mΩGaNFETisanormally-offdevi...

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GH065C018T1TF

TheGH065C018T1TF650V,18mΩGaNFETisanormally-offdevi...

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GH003-磁学理论基础

1、基础定律：法拉第电磁感应定律、楞次定律、安培环路定律、磁路基尔霍夫定律2、磁路关键参数：磁动势、...

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GH002-热设计

1、热阻的定义2、热阻模型3、散热接触面填充4、导热材料选择及应用5、盘上孔散热6、PCB散热设计

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GH001-EMC设计

1、EMC/EMI基础概念及传导(CE)测试2、差模噪声传导路径分析3、差模噪声在传导曲线的频段分布...

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240W三段式快充

PFC+LLC，效率95%，支持三段式充电

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PD-140W-1C

PFC+AHB，支持28V/5A输出，峰值效率：94.5%

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65W PD 快充-1A2C（QR）

QR架构，1A2C，支持20V,3.25A输出，效率93%

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65W PD 快充-1C（QR）

QR架构，支持20V,3.25A输出，效率94%

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镓速奔腾 · 骐骥芯海 | 2026镓宏半导体年会盛典圆满落幕

岁聿云暮，华章日新。2026年2月6日18时18分，镓宏半导体年会盛典在徐州苏宁银河国际酒店启幕，集...

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GaN HEMT的结构、驱动及应用

Ø驱动电路示意：•如图1所示，驱动电路由栅极驱动器、电阻和磁珠组成。通过调节驱动电阻RGon减少Ig...

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2kw Bi-directional Inverter Module

BasedonGAN'shighelectronmobility,itsupportshigherg...

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250W Gan Ebike Charger

Inputcharacteristicsprojectminimumtypicalmaximumun...

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15KW V2G Bi-directional Charging Module

ThebidirectionalAC-DCcharginganddischargingdevicei...

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关于公司名称变更的声明

为适应公司战略发展需要，根据《中华人民共和国公司法》的相关规定，经徐州经济技术开发区市场监督管理局核...

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"Cohesion to the core" -- GSR Semiconductor held the 2023 annual meeting

IntheafternoonofJanuary13,2023,XuzhouGSRSemiconduc...

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6-inch GaN-on-Si Epitaxial Wafer

6-inchGaN-on-SiEpitaxialWafer

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8-inch GaN-on-Si Epitaxial Wafer

8-inchGaN-on-SiEpitaxialWafer

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GSR Semiconductor was shortlisted in the 2022 ZOL International Frontier Science and Technology Innovation Competition - the final of the International Third Generation Semiconductor Thematic Competition

Recently,GSRSemiconductor's"EVSuperFastChargingMod...

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VDP-INV3L100K series vehicle inverter

Inthefieldofpassengervehicleinverter,Sibasedsemico...

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GSR22650 on-board OBC

TheGaNbasedsingle-phaseOBCproductsdevelopedanddesi...

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2KW GaN charger

ThankstothedesignofGaNapplicationcircuit,theproduc...

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GaN 140W Super Flash Charge

•Thevolumeisonly60%ofthesamepoweradapter,whichisco...

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GaN 100W Super Flash Charge

•Thevolumeisonly60%ofthesamepoweradapter,whichisco...

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Gan 65W super charging (1a1c)

•50%smallerthanordinary65Wcharger,easytocarry,fast...

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Gan 65W super charge (1A2C)

•50%smallerthanordinary65Wcharger,easytocarry,fast...

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GaN 30W cube fast charging

•ThesizeisthesameasApple's5Wcharger,butthecharging...

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Gan 20W fast charge

•ThesizeisthesameasApple's5Wcharger,butthecharging...

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Zhang Ke, member of the Standing Committee of the municipal Party committee and Secretary of the Party Working Committee of the economic development zone, went to Xuzhou GSR semiconductor to learn about the progress of the project

OnApril22,ZhangKe,memberoftheStandingCommitteeofth...

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GSR semiconductor and Canadian GaN Systems carry out gallium nitride related tests

XuzhouGSRsemiconductorisaleadinggalliumnitridechip...

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GSR semiconductor cooperates with the computing center of Northwestern University to promote the research project of energy efficiency performance of GaN IDC power supply in micro module data center

Semiconductorindustrynetworknews:OnMarch31,GSRsemi...

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Introduction to Xuzhou GSR Semiconductor Co., Ltd

XuzhouGSRSemiconductorCo.,Ltd.wasestablishedin2021...

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GSR Semiconductor GaN Device Project

GSRSemiconductorGaNDeviceProjectwasofficiallysigne...

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