650V E-Mode硅基氮化镓器件
Description：
The GH065G190G1DC is an enhancement mode GaN on-Silicon power transistor. The properties of GaN
allow for high current, high voltage breakdown and high switching frequency.
The GH065G190G1DC is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
描述：
The GH065G190G1DC is an enhancement mode GaN on-Silicon power transistor. The properties of GaN
allow for high current, high voltage breakdown and high switching frequency.
The GH065G190G1DC is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
应用：
Power Adapters
Fast Battery Charging
Power Factor Correction
Appliance Motor Drives
Wireless Power Transfer
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江苏镓宏半导体有限公司
江苏镓宏半导体有限公司(原徐州金沙江半导体有限公司)成立于2021年，项目发起人为氮化镓领域(GaN HEMT、氮化镓HEMT等GaN 功率晶体管器件，以及氮化镓外延片、氮化镓应用技术)领军人物， 以业内领先的氮化镓功率器件和其全新应用为拳头产品，充分发挥国际领先的6-8寸硅基氮化镓功率器件全套生产制造技术的优势，汇集供应链资源、核心技术、产品制造、核心客户、资本市场和地方政府支持等关键资源，组织筹建新型的IDM产品平台，助力中国在第三代半导体产业领域的跨越式发展。
