650V E-Mode硅基氮化镓器件
Description：
The GH065G190G1DC is an enhancement mode GaN on-Silicon power transistor. The properties of GaN
allow for high current, high voltage breakdown and high switching frequency.
The GH065G190G1DC is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
描述：
The GH065G190G1DC is an enhancement mode GaN on-Silicon power transistor. The properties of GaN
allow for high current, high voltage breakdown and high switching frequency.
The GH065G190G1DC is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
应用：
Power Adapters
Fast Battery Charging
Power Factor Correction
Appliance Motor Drives
Wireless Power Transfer
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Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
