| Image | Part number | Package | VDSS(V) | RDSon(mΩ) | Vth(V) | Ids(A) | Ids(pulse)(A) | Qoss(nC) | Usefor |
|---|---|---|---|---|---|---|---|---|---|
| GH070D400N1-1 | Bare Die | 700 | 320 | 6.4 | -17 | 11.0 | 13.5 | Adapter、Telecom | |
| GH070D600N2-1 | Bare Die | 700 | 500 | 4.1 | -17 | 8.0 | 9.4 | Adapter、Telecom | |
| GH070D240N2-1 | Bare Die | 700 | 200 | 8.0 | -17 | 16.0 | 15.0 | Adapter、Telecom | |
| GH070D960G1-1 | Bare Die | 700 | 860 | 3.0 | -17 | 5.8 | 6.0 | data-com、Industrial | |
| GH070D1K0N2-1 | Bare Die | 700 | 900 | 2.8 | -17 | 5.0 | 5.7 | Adapter、Telecom | |
| GH070D800N1-1 | Bare Die | 700 | 650 | 3.6 | -17 | 7.0 | 6.2 | data-com、Industrial | |
| GH070D135G1-1 | Bare Die | 700 | 120 | 20 | -17 | 38 | 40 | Adapter、Telecom |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
