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GH004-GaN参数详解及应用

VDSS、VGSS、VGS(th)、ID、IDM、、RΘJC、RΘJA、IGSS、IDSS、RDS(...

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GH100Y016Y3EL

GaN-on-Siliconenhancementmodehigh-electron-mobilit...

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GH100V032Y3EB

Description:Bi-directionalGaN-on-Siliconenhancemen...

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GH070E240A1DB

Description:Thisisa700VGaN-on-Sienhancement-modepo...

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GH070E135A1DC

Description:Thisisa700VGaN-on-Sienhancement-modepo...

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GH065G190G1DC

Description:TheGH065G190G1DCisanenhancementmodeGaN...

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GH065C041T1TF

TheGH065C041T1TF650V,41mΩGaNFETisanormally-offdevi...

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GH065C018T1TF

TheGH065C018T1TF650V,18mΩGaNFETisanormally-offdevi...

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镓速奔腾 · 骐骥芯海 | 2026镓宏半导体年会盛典圆满落幕

岁聿云暮,华章日新。2026年2月6日18时18分,镓宏半导体年会盛典在徐州苏宁银河国际酒店启幕,集...

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GaN HEMT的结构、驱动及应用

Ø驱动电路示意:•如图1所示,驱动电路由栅极驱动器、电阻和磁珠组成。通过调节驱动电阻RGon减少Ig...

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6-inch GaN-on-Si Epitaxial Wafer

6-inchGaN-on-SiEpitaxialWafer

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8-inch GaN-on-Si Epitaxial Wafer

8-inchGaN-on-SiEpitaxialWafer

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GSR Semiconductor was shortlisted in the 2022 ZOL International Frontier Science and Technology Innovation Competition - the final of the International Third Generation Semiconductor Thematic Competition

Recently,GSRSemiconductor's"EVSuperFastChargingMod...

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VDP-INV3L100K series vehicle inverter

Inthefieldofpassengervehicleinverter,Sibasedsemico...

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GSR22650 on-board OBC

TheGaNbasedsingle-phaseOBCproductsdevelopedanddesi...

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2KW GaN charger

ThankstothedesignofGaNapplicationcircuit,theproduc...

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GaN 140W Super Flash Charge

•Thevolumeisonly60%ofthesamepoweradapter,whichisco...

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GaN 100W Super Flash Charge

•Thevolumeisonly60%ofthesamepoweradapter,whichisco...

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GaN 30W cube fast charging

•ThesizeisthesameasApple's5Wcharger,butthecharging...

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GSR semiconductor and Canadian GaN Systems carry out gallium nitride related tests

XuzhouGSRsemiconductorisaleadinggalliumnitridechip...

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GSR semiconductor cooperates with the computing center of Northwestern University to promote the research project of energy efficiency performance of GaN IDC power supply in micro module data center

Semiconductorindustrynetworknews:OnMarch31,GSRsemi...

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Introduction to Xuzhou GSR Semiconductor Co., Ltd

XuzhouGSRSemiconductorCo.,Ltd.wasestablishedin2021...

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GSR Semiconductor GaN Device Project

GSRSemiconductorGaNDeviceProjectwasofficiallysigne...

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Ganhonor Semiconductor Co., Ltd

Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.

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