GH065C041T1TF

The GH065C041T1TF 650V, 41mΩ  GaN FET is a normally-off device using GaN Honor’s  platform. 
It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. 

描述：
The GH065C041T1TF 650V, 41mΩ  GaN FET is a normally-off device using GaN Honor’s  platform. 
It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. 
The  platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge
应用：
Datacom
Broad industrial
PV inverter
Servo motor