700V E-Mode硅基氮化镓器件
Description：
This is a 700V GaN-on-Si enhancement-mode power transistor in DFN8x8 package. The properties
of GaN allow for high current, high breakdown voltage and high switching frequency. The DFN8x8 package offers low parasitic inductance, strong heat dissipation capability and high solderability, which make GaN better apply to consumer and industrial applications
描述：
This is a 700V GaN-on-Si enhancement-mode power transistor in DFN8x8 package. The properties
of GaN allow for high current, high breakdown voltage and high switching frequency. The DFN8x8 package offers low parasitic inductance, strong heat dissipation capability and high solderability, which make GaN better apply to consumer and industrial applications
应用：
AC/DC converters
DC/DC converters
Bridgeless totem pole PFC
Fast chargers
Power adapters
| Picture | Name | Type | Description | Detail |
|---|---|---|---|---|
| GH070E240A1DB | 700V E-Mode silicon-based gallium nitride device | 700V E-Mode硅基氮化镓器件 | 查看 |
| Name | Version | Description | Download |
|---|
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
