100V E-Mode硅基氮化镓器件
GaN-on-Silicon enhancement mode
high-electron-mobility-transistor (HEMT) in
En-FCLGA with 5.0 mm x 6.0 mm package size
GaN-on-Silicon E-mode HEMT technology
描述：
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCLGA with 5.0 mm x 6.0 mm package size
GaN-on-Silicon E-mode HEMT technology
Industry application
Very low gate charge
Ultra-low on resistance
Very small footprint
应用：
High frequency DC-DC converter
High density DC/DC power module
Synchronous rectification
Motor driver
Solar system MPPT
| Picture | Name | Type | Description | Detail |
|---|---|---|---|---|
| GH100V032Y3EB | 100V E-Mode silicon-based gallium nitride device | 100V E-Mode硅基氮化镓器件 | 查看 |
| Name | Version | Description | Download |
|---|
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
