100V E-Mode硅基氮化镓器件
Description：
Bi-directional GaN-on-Silicon enhancement modehigh-electron-mobility-transistor (HEMT) in En-FCQFN with 3.0mm x 6.0 mm package size
Bi-directional blocking capability
Description：
Bi-directional GaN-on-Silicon enhancement modehigh-electron-mobility-transistor (HEMT) in En-FCQFN with 3.0mm x 6.0 mm package size
Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on resistance
Applications：
BMS battery protection
High side load switchin bi-directional converter
Switch circuits in multiple power supplier system
| Picture | Name | Type | Description | Detail |
|---|---|---|---|---|
| GH100Y016Y3EL | 100V E-Mode silicon-based gallium nitride device | 100V E-Mode硅基氮化镓器件 | 查看 |
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Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
