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GH004-GaN参数详解及应用

2026-05-29 作者: 镓宏半导体应用部

VDSS 、VGSS、VGS(th) 、ID  、IDM、、RΘJC、RΘJA、IGSS 、IDSS、RDS(ON)、Ciss 、Cgs、Coss  、Cds、Cgd、Qg、Qrr等参数进行详细说明。 

GH004-GaN参数详解及应用【下载文件】
Ganhonor Semiconductor Co., Ltd

Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.

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